Datasheet > BCM856DS/DG,165

BCM856DS/DG,165

更新时间： 2024-09-25 15:28:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	104K
描述
SMALL SIGNAL TRANSISTOR

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中文翻译

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技术参数
数据手册

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BCM856DS/DG,165 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.66
Base Number Matches：	1

BCM856DS/DG,165 数据手册

BCM856BS; BCM856BS/DG

BCM856DS; BCM856DS/DG

PNP/PNP matched double transistors

Rev. 01 — 7 August 2008

Product data sheet

1. Product proﬁle

1.1 General description

PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic

packages. The transistors are fully isolated internally.

Table 1.

Product overview

Type number

Package

NXP

Package conﬁguration

very small

JEITA

BCM856BS

SOT363

SC-88

BCM856BS/DG

BCM856DS

SOT457

SC-74

small

BCM856DS/DG

1.2 Features

I Current gain matching

I Base-emitter voltage matching

I Drop-in replacement for standard double transistors

I AEC-Q101 qualiﬁed

1.3 Applications

I Current mirror

I Differential ampliﬁer

1.4 Quick reference data

Table 2.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEOcollector-emitter voltage

I_C

open base

−65

collector current

DC current gain

−100

450

h_FE

V_CE= −5 V;

I_C= −2 mA

200

290

12 3 4 5 6 7...14

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