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BCM856BS

更新时间: 2024-09-26 11:14:11
品牌 Logo 应用领域
安世 - NEXPERIA 放大器PC光电二极管晶体管
页数 文件大小 规格书
14页 642K
描述
PNP/PNP matched double transistorsProduction

BCM856BS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.26
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:788243Samacsys Pin Count:6
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:SOT-363 (SC-88)Samacsys Released Date:2017-11-02 17:31:22
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified参考标准:AEC-Q101; IEC-60134
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):175 MHz
Base Number Matches:1

BCM856BS 数据手册

 浏览型号BCM856BS的Datasheet PDF文件第2页浏览型号BCM856BS的Datasheet PDF文件第3页浏览型号BCM856BS的Datasheet PDF文件第4页浏览型号BCM856BS的Datasheet PDF文件第5页浏览型号BCM856BS的Datasheet PDF文件第6页浏览型号BCM856BS的Datasheet PDF文件第7页 
BCM856BS; BCM856BS/DG  
BCM856DS; BCM856DS/DG  
PNP/PNP matched double transistors  
Rev. 01 — 7 August 2008  
Product data sheet  
1. Product profile  
1.1 General description  
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic  
packages. The transistors are fully isolated internally.  
Table 1.  
Product overview  
Type number  
Package  
Nexperia  
SOT363  
Package configuration  
very small  
JEITA  
BCM856BS  
SC-88  
BCM856BS/DG  
BCM856DS  
SOT457  
SC-74  
small  
BCM856DS/DG  
1.2 Features  
I Current gain matching  
I Base-emitter voltage matching  
I Drop-in replacement for standard double transistors  
I AEC-Q101 qualified  
1.3 Applications  
I Current mirror  
I Differential amplifier  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO collector-emitter voltage  
IC  
open base  
-
-
65  
V
collector current  
DC current gain  
-
-
100  
450  
mA  
hFE  
VCE = 5 V;  
IC = 2 mA  
200  
290  

BCM856BS 替代型号

型号 品牌 替代类型 描述 数据表
BCM856BS NXP

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TRANS 2PNP 65V 0.1A 6TSSOP