Datasheet > BCM856BSH-Q

BCM856BSH-Q

更新时间： 2024-09-26 11:15:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	232K
描述
65 V, 100 mA PNP/PNP matched double transistorProduction

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BCM856BSH-Q 数据手册

BCM856BSH-Q

65 V, 100 mA PNP/PNP matched double transistor

6 May 2021

Product data sheet

1. General description

PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device

(SMD) plastic package.

NPN/NPN complement: BCM846BSH-Q

2. Features and benefits

•

Low collector capacitance

•

Low collector-emitter saturation voltage

Current gain matching

Base-emitter voltage matching

Drop-in replacement for standard double transistors

No mutual interference between the transistors

High-temperature applications up to 175 °C

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Current mirror

Differential amplifier

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-65

I_C

collector current

DC current gain

-100

450

h_FE

V_CE= -5 V; I_C= -2 mA; T_amb= 25 °C

200

300

Per device

h_FE1/h_FE2

DC current gain

matching

0.95

1.05

V_BE1−V_BE2

base-emitter voltage

matching

[1]

[1] The smaller of the two values is subtracted from the larger value.

12 3 4 5 6 7...10

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