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BCM856BS,115 PDF预览

BCM856BS,115

更新时间: 2024-09-25 19:34:15
品牌 Logo 应用领域
恩智浦 - NXP 放大器光电二极管晶体管
页数 文件大小 规格书
14页 95K
描述
BCM856BS; BCM856BS/DG - PNP/PNP matched double transistors TSSOP 6-Pin

BCM856BS,115 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TSSOP
针数:6Reach Compliance Code:compliant
风险等级:7.96Base Number Matches:1

BCM856BS,115 数据手册

 浏览型号BCM856BS,115的Datasheet PDF文件第2页浏览型号BCM856BS,115的Datasheet PDF文件第3页浏览型号BCM856BS,115的Datasheet PDF文件第4页浏览型号BCM856BS,115的Datasheet PDF文件第5页浏览型号BCM856BS,115的Datasheet PDF文件第6页浏览型号BCM856BS,115的Datasheet PDF文件第7页 
BCM856BS; BCM856BS/DG  
BCM856DS; BCM856DS/DG  
PNP/PNP matched double transistors  
Rev. 01 — 7 August 2008  
Product data sheet  
1. Product profile  
1.1 General description  
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic  
packages. The transistors are fully isolated internally.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package configuration  
very small  
JEITA  
BCM856BS  
SOT363  
SC-88  
BCM856BS/DG  
BCM856DS  
SOT457  
SC-74  
small  
BCM856DS/DG  
1.2 Features  
I Current gain matching  
I Base-emitter voltage matching  
I Drop-in replacement for standard double transistors  
I AEC-Q101 qualified  
1.3 Applications  
I Current mirror  
I Differential amplifier  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO collector-emitter voltage  
IC  
open base  
-
-
65  
V
collector current  
DC current gain  
-
-
100  
450  
mA  
hFE  
VCE = 5 V;  
IC = 2 mA  
200  
290  
 
 
 
 
 

BCM856BS,115 替代型号

型号 品牌 替代类型 描述 数据表
BCM856BS NXP

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