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BCM847DS/T1 PDF预览

BCM847DS/T1

更新时间: 2024-11-13 14:41:03
品牌 Logo 应用领域
恩智浦 - NXP 放大器光电二极管晶体管
页数 文件大小 规格书
15页 120K
描述
TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, TSOP-6, BIP General Purpose Small Signal

BCM847DS/T1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TSOP
包装说明:PLASTIC, SC-74, TSOP-6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.18Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

BCM847DS/T1 数据手册

 浏览型号BCM847DS/T1的Datasheet PDF文件第2页浏览型号BCM847DS/T1的Datasheet PDF文件第3页浏览型号BCM847DS/T1的Datasheet PDF文件第4页浏览型号BCM847DS/T1的Datasheet PDF文件第5页浏览型号BCM847DS/T1的Datasheet PDF文件第6页浏览型号BCM847DS/T1的Datasheet PDF文件第7页 
BCM847BV; BCM847BS;  
BCM847DS  
NPN/NPN matched double transistors  
Rev. 06 — 28 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic  
packages. The transistors are fully isolated internally.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
PNP/PNP  
complement  
Matched version of  
JEITA  
-
BCM847BV  
BCM847BS  
BCM847DS  
SOT666  
SOT363  
SOT457  
BCM857BV  
BCM857BS  
BCM857DS  
BC847BV  
BC847BS  
-
SC-88  
SC-74  
1.2 Features  
I Current gain matching  
I Base-emitter voltage matching  
I Drop-in replacement for standard double transistors  
1.3 Applications  
I Current mirror  
I Differential amplifier  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO collector-emitter voltage  
IC  
open base  
-
-
45  
V
collector current  
DC current gain  
-
-
100  
450  
mA  
hFE  
VCE = 5 V;  
IC = 2 mA  
200  
290  

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