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BC849BT PDF预览

BC849BT

更新时间: 2024-09-12 22:54:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
9页 232K
描述
NPN Silicon AF Transistors

BC849BT 技术参数

生命周期:Obsolete零件包装代码:SC-75
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.57Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

BC849BT 数据手册

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BC846T...BC850T  
NPN Silicon AF Transistors  
For AF input stages and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Low noise between 30 Hz and 15 kHz  
Complementary types:  
3
BC856T, BC857T,  
BC858T, BC859T, BC860T  
2
1
VPS05996  
Type  
Marking  
1As  
1Bs  
1Es  
1Fs  
1Gs  
1Js  
1Ks  
1Ls  
Pin Configuration  
Package  
SC75  
SC75  
SC75  
SC75  
SC75  
SC75  
SC75  
SC75  
SC75  
SC75  
SC75  
SC75  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
BC846AT  
BC846BT  
BC847AT  
BC847BT  
BC847CT  
BC848AT  
BC848BT  
BC848CT  
BC849BT  
BC849CT  
BC850BT  
BC850CT  
2Bs  
2cs  
2Fs  
2Gs  
1
Aug-01-2002  

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