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BC849C PDF预览

BC849C

更新时间: 2024-11-01 06:41:39
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
2页 41K
描述
NPN General Purpose Transistors

BC849C 数据手册

 浏览型号BC849C的Datasheet PDF文件第2页 
SMD Type  
Transistors  
NPN General Purpose Transistors  
BC849, BC850  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Low current (max. 100 mA)  
Low voltage (max. 45 V).  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VCBO  
Rating  
30  
Unit  
V
V
collector-base voltage  
collector-emitter voltage  
50  
30  
V
VCEO  
45  
V
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
VEBO  
IC  
5
V
100  
mA  
mA  
mA  
mW  
ICM  
200  
IBM  
200  
Ptot  
Tstg  
Tj  
250  
total power dissipation Tamb 25  
storage temperature  
*
-65 to 150  
150  
junction temperature  
operating ambient temperature  
Tamb  
Rth(j-a)  
-65 to 150  
500  
thermal resistance from junction to ambient *  
K/W  
* Transistor mounted on an FR4 printed-circuit board.  
1
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