是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.57 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PDSO-G3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC849BTR | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, | |
BC849BTR13 | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, | |
BC849BTRL | YAGEO |
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Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | |
BC849BTRL13 | NXP |
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TRANSISTOR 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BC849BTRL13 | YAGEO |
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Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | |
BC849BW | PANJIT |
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NPN GENERAL PURPOSE TRANSISTORS | |
BC849BW | NXP |
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NPN general purpose transistors | |
BC849BW | INFINEON |
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NPN Silicon AF Transistor (For AF input stages and driver applications High current gain L | |
BC849BW | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors | |
BC849BW | TSC |
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NPN Transistor |