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BC849C PDF预览

BC849C

更新时间: 2024-11-05 04:34:23
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
5页 272K
描述
General Purpose Transistor NPN Silicon

BC849C 数据手册

 浏览型号BC849C的Datasheet PDF文件第2页浏览型号BC849C的Datasheet PDF文件第3页浏览型号BC849C的Datasheet PDF文件第4页浏览型号BC849C的Datasheet PDF文件第5页 
BC846A/B-BC847A/B/C  
BC848A/B/C-BC849B/C  
BC850B/C  
General Purpose Transistor  
NPN Silicon  
COLLECTOR  
3
MARKING DIAGRAM  
3
3
XX = Device  
Code (See  
Table Below)  
1
1
2
BASE  
SOT-23  
*Moisture Sensitivity Level: 1  
*ESD Rating - Human Body Model:>4000V  
-Machine Model:>400V  
1
2
2
EMITTER  
( T =25 C unless otherwise noted)  
M aximum R atings  
A
Rating  
Symbol  
V
CEO  
Value  
65  
Unit  
Collector-Emitter Voltage  
BC846  
Vdc  
45  
30  
BC847, BC850  
BC848, BC849  
Collector-Base Voltage  
BC846  
BC847, BC850  
BC848, BC849  
Vdc  
Vdc  
V
V
80  
50  
30  
6.0  
6.0  
5.0  
CBO  
Emitter-Base VOltage  
BC846  
BC847, BC850  
BC848, BC849  
EBO  
I
C
Collector Current-Continuous  
mAdc  
100  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board  
P
D
mW  
mW/ C  
(Note 1.)T =25 C  
225  
1.8  
A
Derate above 25 C  
R
C/W  
Thermal Resistance, Junction to Ambient  
θ
(Note 1.)  
(Note 2.)  
JA  
556  
Total Device Dissipation Alumina  
Substrate, (Note 2.) T =25 C  
A
Derate above 25 C  
300  
2.4  
mW  
mW/ C  
P
D
R
θ
JA  
C/W  
Thermal Resistance, Junction to Ambient  
Junction and Storage, Temperature Range  
417  
T
J,Tstg  
-55 to +150  
C
Device Marking  
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J;  
BC848B;=1K; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F; BC850C=2G  
1.FR-5=1.0 x 0.75 x 0.062 in.  
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina  
WEITRO N  
http://w w w . w e itr on. c om. tw  

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