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BC849C PDF预览

BC849C

更新时间: 2024-09-15 04:34:23
品牌 Logo 应用领域
强茂 - PANJIT 晶体晶体管
页数 文件大小 规格书
6页 504K
描述
NPN GENERAL PURPOSE TRANSISTORS

BC849C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.58
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):420
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BC849C 数据手册

 浏览型号BC849C的Datasheet PDF文件第2页浏览型号BC849C的Datasheet PDF文件第3页浏览型号BC849C的Datasheet PDF文件第4页浏览型号BC849C的Datasheet PDF文件第5页浏览型号BC849C的Datasheet PDF文件第6页 
BC846,BC847,BC848,BC849,BC850 SERIES  
NPN GENERAL PURPOSE TRANSISTORS  
Unit: inch (mm)  
SOT- 23  
225 mWatts  
CURRENT  
30/45/65 Volts  
VOLTAGE  
FEATURES  
• General purpose amplifier applications  
• NPN epitaxial silicon, planar design  
• Collector current IC = 100mA  
.119(3.00)  
.110(2.80)  
• Pb free product are available : 99% Sn above can meet Rohs  
environment substance directive request  
MECHANICALDATA  
.083(2.10)  
.066(1.70)  
.006(.15)  
.002(.05)  
Case: SOT-23, Plastic  
Terminals: Solderable per MIL-STD-202G, Method 208  
Approx. Weight: 0.008 gram  
.006(.15)MAX  
.020(.50)  
.013(.35)  
D evice M arking:  
BC 846A=46A BC 847A=47A BC 848A=48A  
BC 846B=46B BC 847B=47B BC 848B=48B BC 849B=49B BC 850B=50B  
BC 847C =47C BC 848C =48C BC 849C =49C BC 850C =50C  
ABSOLUTE RATINGS  
PARAMETER  
BC846  
Symbol  
Value  
Units  
V
65  
45  
30  
Collector - Emitter Voltage  
Collector - Base Voltage  
BC847,BC850  
BC848,BC849  
V
V
V
CEO  
BC846  
BC847,BC850  
BC848,BC849  
80  
50  
30  
CBO  
EBO  
V
BC846  
BC847,BC850  
BC848,BC849  
6.0  
6.0  
5.0  
Emitter - Base Voltage  
V
Collector Current - Continuous  
I
C
100  
mA  
THERMALCHARACTERISTICS  
PARAM ETER  
Sym bol  
Value  
225  
Units  
m W  
M axPowerD issipation (Note 1)  
PTO T  
Therm alResistance ,Junction to Am bient  
Junction Tem perature  
RθJA  
556  
O C /W  
O C  
TJ  
-55 to 150  
-55 to 150  
Storage Tem perature  
TISTG  
O C  
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.  
REV.0-MAR.7.2005  
PAGE . 1  

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SWITCHING AND AMPLIFIER APPLICATION