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BC817-25W PDF预览

BC817-25W

更新时间: 2024-11-28 04:08:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 357K
描述
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

BC817-25W 数据手册

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SPICE MODELS: BC817-16W BC817-25W BC817-40W  
BC817-16W / -25W / -40W  
Lead-free Green  
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Features  
·
·
·
·
·
·
Ideally Suited for Automatic Insertion  
Epitaxial Planar Die Construction  
For Switching, AF Driver and Amplifier Applications  
Complementary PNP Types Available (BC807-xxW)  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT-323  
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
A
C
B
Mechanical Data  
C
C
B
·
Case: SOT-323  
D
0.65 Nominal  
·
Case Material: Molded Plastic. "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
B
E
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
G
H
G
H
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish – Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
K
M
J
·
·
Pin Connections: See Diagram  
Marking:  
K
0.90  
0.25  
0.10  
0°  
J
L
D
E
L
P/N  
Marking  
K6A  
BC817-16W  
BC817-25W  
BC817-40W  
M
K6B  
a
K6C  
All Dimensions in mm  
·
·
Ordering & Date Code Information: See Page 3  
Approximate Weight: 0.006 grams  
@TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCEO  
VEBO  
IC  
Value  
45  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
5.0  
V
500  
mA  
mA  
mA  
mW  
°C/W  
°C  
ICM  
Peak Collector Current  
Peak Emitter Current  
1000  
1000  
200  
IEM  
Power Dissipation at TSB = 50°C (Note 3)  
Pd  
R
qJA  
Thermal Resistance, Junction to Ambient Air (Note 3)  
Operating and Storage Temperature Range  
625  
Tj, TSTG  
-65 to +150  
@TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic (Note 4)  
Symbol  
Min  
Max  
Unit  
Test Condition  
DC Current Gain  
Current Gain Group -16  
VCE = 1.0V, IC = 100mA  
100  
160  
250  
60  
100  
170  
250  
400  
600  
-25  
-40  
hFE  
Current Gain Group -16  
VCE = 1.0V, IC = 300mA  
-25  
-40  
IC = 500mA, IB = 50mA  
VCE = 1.0V, IC = 300mA  
VCE(SAT)  
VBE  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
0.7  
1.2  
V
V
VCE = 45V  
100  
5.0  
nA  
µA  
ICES  
IEBO  
fT  
Collector-Emitter Cutoff Current  
Emitter-Base Cutoff Current  
Gain Bandwidth Product  
VCE = 25V, Tj = 150°C  
VEB = 4.0V  
100  
nA  
MHz  
pF  
VCE = 5.0V, IC = 10mA,  
f = 50MHz  
100  
VCB = 10V, f = 1.0MHz  
CCBO  
Collector-Base Capacitance  
12  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,  
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Short duration pulse test used to minimize self-heating effect.  
DS30575 Rev. 4 - 2  
1 of 3  
BC817-16W / -25W / -40W  
www.diodes.com  
ã Diodes Incorporated  

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