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BC817-40 PDF预览

BC817-40

更新时间: 2024-02-11 15:48:28
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
2页 279K
描述
TRANSISTOR (NPN)

BC817-40 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.73Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):250
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC817-40 数据手册

 浏览型号BC817-40的Datasheet PDF文件第2页 
BC817  
TRANSISTOR (NPN)  
BC817-16  
BC817-25  
BC817-40  
SOT-23  
FEATURES  
1. BASE  
z
z
z
z
z
For general AF applications  
High collector current  
High current gain  
2. EMITTER  
3. COLLECTOR  
Low collector-emitter saturation voltage  
Complementary types: BC807 (PNP)  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Units  
V
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
VCEO  
VEBO  
IC  
45  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
0.5  
A
PC  
0.3  
W
Tj  
150  
-55-150  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
VCBO  
Test  
conditions  
MIN  
50  
45  
5
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 10μA, IE=0  
VCEO  
IC= 10mA, IB=0  
V
VEBO  
IE= 1μA, IC=0  
V
μA  
ICBO  
VCB= 45 V , IE=0  
VEB= 4V, IC=0  
0.1  
0.1  
600  
μA  
Emitter cut-off current  
IEBO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
VBE  
VCE= 1V, IC= 100mA  
VCE= 1V, IC= 500mA  
IC= 500mA, IB= 50mA  
IC= 500mA, IB= 50mA  
VCE= 1 V, IC= 500mA  
VCB=10V ,f=1MHz  
100  
40  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
0.7  
1.2  
1.2  
V
V
V
10  
Collecter capactiance  
Cob  
pF  
V
CE= 5 V,  
IC= 10mA  
Transition frequency  
fT  
100  
MHz  
f=100MHz  
CLASSIFICATION OF hFE  
(1)  
Rank  
Range  
Marking  
BC817-16  
BC817-25  
160-400  
6B  
BC817-40  
100-250  
6A  
250-600  
6C  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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