Datasheet > BC817-40/E8

BC817-40/E8

更新时间： 2024-11-17 23:34:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	204K
描述
TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 800MA I(C) \| SOT-23

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数据手册

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BC817-40/E8 数据手册

BC817, BC818

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistors (NPN)

Mounting Pad Layout

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

0.031 (0.8)

.016 (0.4)

Top View

0.035 (0.9)

0.079 (2.0)

Pin Configuration

1 = Base

2 = Emitter

3 = Collector

0.037 (0.95)

.037(0.95)

Type

Marking

BC817-16

-25

-40

BC818-16

-25

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

-40

Dimensions in inches and (millimeters)

Mechanical Data

Features

Case: SOT-23 Plastic Package

• NPN Silicon Epitaxial Planar Transistors for

switching, AF driver and amplifier applications.

Weight: approx. 0.008g

• Especially suited for automatic insertion in thick

and thin-film circuits.

Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

• These transistors are subdivided into three groups

-16, -25, and -40 according to their current gain.

• As complementary types, the PNP transistors

BC807 and BC808 are recommended.

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage (base shorted) BC817

BC818

V_CES

Collector-Emitter Voltage (base open)

BC817

BC818

V_CEO

Emitter-Base Voltage

Collector Current

V_EBO

I_C

800

°C/W

°C

Peak Collector Current

Peak Base Current

I_CM

I_BM

–I_EM

P_tot

R_θJA

R_θSB

T_j

1000

200

Peak Emitter Current

Power Dissipation at T_SB= 50 ˚C

1000

310⁽¹⁾

450⁽¹⁾

320⁽¹⁾

150

Thermal Resistance Junction to Ambiant Air

Thermal Resistance Junction to Substrate Backside

Junction Temperature

Storage Temperature Range

T_S

–65 to +150

°C

Note: (1) Device on fiberglass substrate, see layout on third page.

Document Number 88163

09-May-02

www.vishay.com

12 3 4 5

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