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BC817-40LT1 PDF预览

BC817-40LT1

更新时间: 2024-11-19 22:48:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管
页数 文件大小 规格书
4页 93K
描述
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

BC817-40LT1 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.04
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):250JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN功耗环境最大值:0.225 W
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.7 VBase Number Matches:1

BC817-40LT1 数据手册

 浏览型号BC817-40LT1的Datasheet PDF文件第2页浏览型号BC817-40LT1的Datasheet PDF文件第3页浏览型号BC817-40LT1的Datasheet PDF文件第4页 
Order this document  
by BC817–16LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
2
BASE  
1
3
EMITTER  
MAXIMUM RATINGS  
1
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol  
Value  
Unit  
V
2
V
CEO  
V
CBO  
V
EBO  
45  
50  
V
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
EmitterBase Voltage  
5.0  
500  
V
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board, (1)  
P
D
T
A
= 25°C  
225  
1.8  
mW  
mW/°C  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
556  
°C/W  
JA  
D
P
Alumina Substrate, (2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
417  
°C/W  
°C  
JA  
T , T  
J stg  
55 to +150  
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
(I = –10 mA)  
C
V
45  
50  
V
V
V
(BR)CEO  
CollectorEmitter Breakdown Voltage  
V
(BR)CES  
(BR)EBO  
(V  
EB  
= 0, I = –10 µA)  
C
EmitterBase Breakdown Voltage  
(I = –1.0 A)  
E
V
5.0  
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= 20 V)  
= 20 V, T = 150°C)  
100  
5.0  
nA  
µA  
A
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
Thermal Clad is a registered trademark of the Bergquist Company.  
Motorola, Inc. 1996  

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