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BC81740MTF PDF预览

BC81740MTF

更新时间: 2024-01-04 01:53:53
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
5页 166K
描述
NPN Epitaxial Silicon Transistor

BC81740MTF 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:LEAD FREE, SOT-23, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.6最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):170JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:COMMERCIAL
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz

BC81740MTF 数据手册

 浏览型号BC81740MTF的Datasheet PDF文件第2页浏览型号BC81740MTF的Datasheet PDF文件第3页浏览型号BC81740MTF的Datasheet PDF文件第4页浏览型号BC81740MTF的Datasheet PDF文件第5页 
November 2006  
BC817/BC818  
NPN Epitaxial Silicon Transistor  
tm  
Features  
Switching and Amplifier Applications  
Suitable for AF-Driver stages and low power output stages  
Complement to BC807/ BC808  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
: BC817  
: BC818  
50  
30  
V
V
VCEO  
Collector-Emitter Voltage  
: BC817  
: BC818  
45  
25  
V
V
VEBO  
IC  
Emitter-Base Voltage  
Collector Current (DC)  
5
800  
V
mA  
mW  
°C  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
310  
TJ  
150  
TSTG  
-65 ~ 150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics* Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BVCEO  
Collector-Emitter Breakdown Voltage  
IC=10mA, IB=0  
: BC817  
: BC818  
45  
25  
V
V
BVCES  
Collector-Emitter Breakdown Voltage  
IC=0.1mA, VBE=0  
: BC817  
: BC818  
50  
30  
V
V
BVEBO  
ICES  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
IE=0.1mA, IC=0  
VCE=25V, VBE=0  
VEB=4V, IC=0  
5
V
100  
100  
630  
nA  
nA  
IEBO  
hFE1  
hFE2  
VCE=1V, IC=100mA  
VCE=1V, IC=300mA  
100  
60  
VCE (sat)  
VBE (on)  
fT  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
IC=500mA, IB=50mA  
VCE=1V, IC=300mA  
0.7  
1.2  
V
V
Current Gain Bandwidth Product  
VCE=5V, IC=10mA  
f=50MHz  
100  
MHz  
Cob  
Output Capacitance  
VCB=10V, f=1MHz  
12  
pF  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
BC817/BC818 Rev. B  
1
www.fairchildsemi.com  

BC81740MTF 替代型号

型号 品牌 替代类型 描述 数据表
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