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BC817-40TA PDF预览

BC817-40TA

更新时间: 2024-11-18 12:58:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 59K
描述
500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN

BC817-40TA 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.53
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):250JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzVCEsat-Max:0.7 V
Base Number Matches:1

BC817-40TA 数据手册

 浏览型号BC817-40TA的Datasheet PDF文件第2页浏览型号BC817-40TA的Datasheet PDF文件第3页 
BC817-16 / -25 / -40  
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Features  
·
·
·
Ideally Suited for Automatic Insertion  
Epitaxial Planar Die Construction  
For Switching, AF Driver and Amplifier  
Applications  
SOT-23  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.85  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.80  
8°  
A
B
C
·
Complementary PNP Types Available (BC807)  
C
B
C
Mechanical Data  
D
TOP VIEW  
B
E
E
·
·
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202, Method  
208  
D
G
E
G
H
H
K
·
·
M
J
J
L
K
L
·
·
Pin Connections: See Diagram  
M
Marking (See Page 3): BC817-16 6A, K6A  
BC817-25 6B, K6B  
a
BC817-40 6C, K6C  
All Dimensions in mm  
·
·
Ordering & Date Code Information: See Page 3  
Approx. Weight: 0.008 grams  
@TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCEO  
VEBO  
IC  
Value  
45  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
5.0  
V
800  
mA  
mA  
mA  
mW  
°C/W  
°C/W  
°C  
ICM  
Peak Collector Current  
Peak Emitter Current  
1000  
1000  
310  
IEM  
Power Dissipation at TSB = 50°C (Note 1)  
Pd  
RqSB  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Substrate Backside (Note 1)  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
320  
403  
-65 to +150  
@TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic (Note 2)  
Symbol  
Min  
Max  
Unit  
Test Condition  
DC Current Gain  
Current Gain Group -16  
VCE = 1.0V, IC = 100mA  
100  
160  
250  
60  
100  
170  
250  
400  
600  
-25  
-40  
hFE  
Current Gain Group -16  
VCE = 1.0V, IC = 300mA  
-25  
-40  
IC = 500mA, IB = 50mA  
VCE = 1.0V, IC = 300mA  
VCE(SAT)  
VBE  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
0.7  
1.2  
V
V
VCE = 45V  
100  
5.0  
nA  
µA  
ICES  
IEBO  
fT  
Collector-Emitter Cutoff Current  
Emitter-Base Cutoff Current  
Gain Bandwidth Product  
VCE = 25V, Tj = 150°C  
VEB = 4.0V  
100  
nA  
MHz  
pF  
V
CE = 5.0V, IC = 10mA,  
100  
f = 50MHz  
VCB = 10V, f = 1.0MHz  
CCBO  
Collector-Base Capacitance  
12  
2
Notes:  
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm area.  
2. Short duration pulse test used to minimize self-heating effect.  
DS11107 Rev. 9 - 2  
1 of 3  
BC817-16/-25/-40  

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