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BC817-40LT1G

更新时间： 2024-11-17 22:48:15

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	62K
描述
General Purpose Transistors(NPN Silicon)

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数据手册
替代型号

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BC817-40LT1G 数据手册

BC817−16LT1,

BC817−25LT1, BC817−40LT1

General Purpose

Transistors

NPN Silicon

http://onsemi.com

Features

COLLECTOR

• Pb−Free Packages are Available

BASE

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol Value

Unit

EMITTER

CEO

CBO

EBO

5.0

500

Collector Current − Continuous

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

SOT−23

CASE 318

STYLE 6

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board, (Note 1)

T = 25°C

225

1.8

mW/°C

Derate above 25°C

MARKING DIAGRAM

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation

556

°C/W

Alumina Substrate, (Note 2) T = 25°C

Derate above 25°C

300

2.4

mW/°C

xxD

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

T , T

−55 to

+150

stg

= Specific Device Code

= Date Code

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 6

BC817−16LT/D

12 3 4

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BC817-40LT1G 替代型号

型号	品牌	替代类型	描述	数据表
BC817-40LT3	ONSEMI	完全替代	General Purpose Transistors(NPN Silicon)
BC817-40LT1	ONSEMI	完全替代	General Purpose Transistors(NPN Silicon)
BC817-40LT3G	ONSEMI	类似代替	General Purpose Transistors(NPN Silicon)

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