Datasheet > BC817-40RF

BC817-40RF

更新时间： 2024-11-21 06:41:39

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
2页	76K
描述
300mW, NPN Small Signal Transistor

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中文翻译

获取价格

数据手册

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BC817-40RF 数据手册

BC817-16/-25/-40

300mW, NPN Small Signal Transistor

Small Signal Diode

SOT-23

Collector

Emitter

Base

Features

Low power loss, high current capability, low V^F

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Min Max

0.059 0.067

Dimensions

Min

1.50

3.55

0.45

2.60

1.05

0.08

Max

1.70

Mechanical Data

Case : SOT- 23 small outline plastic package

3.85 0.140 0.152

0.65 0.018 0.026

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Weight : 0.008gram (approximately)

2.80

1.25

0.15

0.102 0.11

0.041 0.049

0.003 0.006

0.50 REF

0.02 REF

Ordering Information

Part No.

Packing

Package

SOT-23

BC817-16/-25/-40 RF

3Kpcs/7" Reel

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

BC817-16

BC817-25

BC817-40

Units

Power Dissipation

300

V_CBO

V_CEO

V_EBO

I^C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

500

Collector Current

°C/W

°C

Thermal Resistance (Junction to Ambient) (Note 1)

Junction and Storage Temperature Range

RθJA

T^J, TSTG

388

-55 to + 150

Electrical Characteristics

Type Number

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

BC817-16

BC817-25

BC817-40

Units

I_C= 10μA

I_C= 10mA

I_E= 1μA

I_E= 0

I_B= 0

I_C= 0

I_E= 0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

V_CB= 45V

0.1

μA

_EB= 4V

I_C= 0

I_EBO

Emitter Cut-offCurrent

0.1

I_C= 500mA

I_B= 50mA

V_CE(sat)

V_BE(sat)

f_T

0.7

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

1.2

V_CE= 5V I_C= 10mA f= 100MHz

V^R=0V, f=1.0MHz

Transition frequency

Junction Capacitance

100

MHz

V_CE= 1V

I_C= 100mA

100

>40

600

>40

h_FE

DC current gain

>40

160-400

100-250

250-600

Notes:1. Valid provided that electrodes are kept at ambient temperature

Version : C09

中文翻译

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与BC817-40RF相关器件

型号	品牌	获取价格	描述	数据表
BC817-40RFG	TSC	获取价格	300mW, NPN Small Signal Transistor
BC817-40S62Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
BC817-40T/R	NXP	获取价格	TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI
BC817-40TA	DIODES	获取价格	500mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN
BC817-40-TAPE-13	NXP	获取价格	TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC817-40-TAPE-7	NXP	获取价格	TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC817-40-TP	MCC	获取价格	NPN Small Signal Transistor 310mW
BC817-40-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
BC817-40TRL	NXP	获取价格	TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC817-40TRL13	NXP	获取价格	TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa

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