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BC817-40RFG PDF预览

BC817-40RFG

更新时间： 2024-11-19 01:09:23
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
4页 255K
描述
300mW, NPN Small Signal Transistor

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中文翻译

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BC817-40RFG 数据手册

 浏览型号BC817-40RFG的Datasheet PDF文件第2页浏览型号BC817-40RFG的Datasheet PDF文件第3页浏览型号BC817-40RFG的Datasheet PDF文件第4页 
BC817-16/-25/-40  
Taiwan Semiconductor  
Small Signal Product  
300mW, NPN Small Signal Transistor  
FEATURES  
- Low power loss, high current capability, low VF  
- Surface mount device type  
- Moisture sensitivity level 1  
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
- Pb free and RoHS complian  
- Packing code with suffix "G" means  
green compound (halogen-free)  
SOT-23  
MECHANICAL DATA  
- Case: SOT- 23 small outline plastic package  
- Terminal: Matte tin plated, lead free,  
solderable per MIL-STD-202, Method 208 guaranteed  
- High temperature soldering guaranteed: 260°C/10s  
- Weight: 8mg (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)  
PARAMETER  
VALUE  
SYMBOL  
PD  
UNIT  
mW  
V
Power dissipation  
300  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
50  
45  
5
V
V
500  
mA  
°C  
Thermal Resistance (Junction to Ambient)  
Junction Temperature  
RθJA  
TJ  
417  
150  
°C  
Storage Temperature Range  
TSTG  
-55 to +150  
°C  
Notes: 1. Valid provided that electrodes are kept at ambient temperature  
PARAMETER  
BC817-16 BC817-25 BC817-40  
SYMBOL  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
UNIT  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
IC= 10μA  
IC= 10mA  
IE= 1μA  
IE= 0  
IB= 0  
IC= 0  
IE= 0  
IC= 0  
50  
45  
V
5
V
VCB= 45V  
VEB= 4V  
0.1  
0.1  
0.7  
1.2  
100  
10  
μA  
μA  
V
Emitter Cut-off Current  
IEBO  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
IC= 500mA IB= 50 mA  
IC= 500mA IB= 50 mA  
VCE(sat)  
VBE(sat)  
fT  
V
VCE= 5V IC= 10mA  
f= 100MHz  
f= 1.0MHz  
IC= 100mA  
IC= 100mA  
MHz  
pF  
VCB=10V  
VCE= 1V  
VCE= 1V  
CCBO  
Junction Capacitance  
100  
>40  
400  
160  
600  
250  
hFE  
DC Current Gain  
hFE  
hFE  
100-250  
160-400  
40  
250-600  
DC Current Gain  
Min. DC Current Gain  
Vce=1V  
Ic=500mA  
Document Number: DS_S1404005  
Version: H15  
1234

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