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BC817-40-MR PDF预览

BC817-40-MR

更新时间: 2024-01-11 00:19:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管过程控制系统PCS
页数 文件大小 规格书
4页 42K
描述
TRANSISTOR BC817-40 MINIREEL 500PCS

BC817-40-MR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.73Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):250
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC817-40-MR 数据手册

 浏览型号BC817-40-MR的Datasheet PDF文件第2页浏览型号BC817-40-MR的Datasheet PDF文件第3页浏览型号BC817-40-MR的Datasheet PDF文件第4页 
Discr ete P OWER & Sign a l  
Tech n ologies  
BC817-25  
BC817-40  
C
E
SOT-23  
B
Mark: 6B. / 6C.  
NPN General Purpose Amplifier  
This device is designed for general purpose medium power  
amplifiers and switches requiring collector currents to 1.2 A.  
Sourced from Process 38.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCES  
VEBO  
IC  
Collector-Emitter Voltage  
45  
50  
V
V
V
A
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.5  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
*BC817-25 / BC817-40  
PD  
Total Device Dissipation  
Derate above 25 C  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Ambient  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.  
ã 1997 Fairchild Semiconductor Corporation  

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