Datasheet > BC817-40-MR

BC817-40-MR

更新时间： 2024-11-17 23:34:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管过程控制系统 PCS
页数	文件大小	规格书
4页	42K
描述
TRANSISTOR BC817-40 MINIREEL 500PCS

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数据手册

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BC817-40-MR 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

BC817-25

BC817-40

SOT-23

Mark: 6B. / 6C.

NPN General Purpose Amplifier

This device is designed for general purpose medium power

amplifiers and switches requiring collector currents to 1.2 A.

Sourced from Process 38.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CES

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.5

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BC817-25 / BC817-40

P_D

Total Device Dissipation

Derate above 25 C

350

2.8

mW/ C

Thermal Resistance, Junction to Ambient

357

R_θ

C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

ã 1997 Fairchild Semiconductor Corporation

12 3 4

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