Datasheet > BC817-40L

BC817-40L

更新时间： 2024-11-18 12:31:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
13页	178K
描述
General Purpose Transistors NPN Silicon Collector â Emitter Voltage VCEO 45

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BC817-40L 数据手册

BC846ALT1G Series,

SBC846ALT1G Series

General Purpose

Transistors

NPN Silicon

Features

http://onsemi.com

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: >4000 V

COLLECTOR

ESD Rating − Machine Model: >400 V

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

BASE

Site and Control Change Requirements

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

CEO

Vdc

BC846, SBC846

BC847, BC850, SBC847

BC848, BC849, SBC848

SOT−23

CASE 318

STYLE 6

Collector−Base Voltage

Vdc

CBO

BC846, SBC846

BC847, BC850, SBC847

BC848, BC849, SBC848

MARKING DIAGRAM

Emitter−Base Voltage

EBO

BC846, SBC846

BC847, BC850, SBC847

BC848, BC849, SBC848

6.0

5.0

XX M G

Collector Current − Continuous

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

XX = Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

225

(Note 1)

T = 25°C

Derate above 25°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 12 of this data sheet.

1.8

mW/°C

°C/W

Thermal Resistance,

556

Junction−to−Ambient (Note 1)

Total Device Dissipation

300

Alumina Substrate (Note 2)

T = 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

417

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.

Publication Order Number:

November, 2011 − Rev. 11

BC846ALT1/D

12 3 4 5 6 7...13

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与BC817-40L相关器件

型号	品牌	获取价格	描述	数据表
BC817-40L99Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
BC817-40LT1	MOTOROLA	获取价格	CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
BC817-40LT1	ONSEMI	获取价格	General Purpose Transistors(NPN Silicon)
BC817-40LT1	LRC	获取价格	General Purpose Transistors(NPN Silicon)
BC817-40LT1	RECTRON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
BC817-40LT1	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
BC817-40LT1G	ONSEMI	获取价格	General Purpose Transistors(NPN Silicon)
BC817-40LT1-T	RECTRON	获取价格	Transistor
BC817-40LT1-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
BC817-40LT3	ONSEMI	获取价格	General Purpose Transistors(NPN Silicon)

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