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BC817-40LT1 PDF预览

BC817-40LT1

更新时间: 2024-02-06 13:10:13
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
2页 52K
描述
General Purpose Transistors(NPN Silicon)

BC817-40LT1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.04
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):250JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC817-40LT1 数据手册

 浏览型号BC817-40LT1的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
NPN Silicon  
3
BC817-16LT1  
COLLECTOR  
BC817-25LT1  
BC817-40LT1  
1
BASE  
2
EMITTER  
3
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
45  
Unit  
V
1
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
2
CASE 318–08, STYLE 6  
SOT–23 (TO–236AB)  
50  
V
5.0  
V
500  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
225  
1.8  
mW  
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
556  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
T J , T stg  
–55 to +150  
DEVICE MARKING  
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = –10 mA)  
V (BR)CEO  
45  
50  
V
V
V
Collector–Emitter Breakdown Voltage  
(VEB = 0, IC = –10 µA)  
V (BR)CES  
Emitter–Base Breakdown Voltage  
(I E = –1.0 µA)  
V (BR)EBO  
I CBO  
5.0  
Collector Cutoff Current  
(VCB = 20 V)  
100  
5.0  
nA  
(VCB = 20 V, TA = 150°C)  
µA  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
M2–1/2  

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