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BC817-40-13 PDF预览

BC817-40-13

更新时间： 2024-11-19 03:21:35
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美台 - DIODES /
页数 文件大小 规格书
3页 73K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

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BC817-40-13 数据手册

 浏览型号BC817-40-13的Datasheet PDF文件第2页浏览型号BC817-40-13的Datasheet PDF文件第3页 
SPICE MODELS: BC817-16 BC817-25 BC817-40  
BC817-16 / -25 / -40  
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Features  
·
·
·
·
·
Ideally Suited for Automatic Insertion  
Epitaxial Planar Die Construction  
For Switching, AF Driver and Amplifier Applications  
Complementary PNP Types Available (BC807)  
Available in Lead Free/RoHS Compliant Version (Note 3)  
SOT-23  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
B
C
Mechanical Data  
C
B
C
·
·
Case: SOT-23  
D
TOP VIEW  
B
E
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
E
D
G
E
G
H
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
H
Terminals: Solderable per MIL-STD-202, Method 208  
K
M
J
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please see Ordering  
Information, Note 5, on Page 3  
J
L
K
L
·
·
Pin Connections: See Diagram  
M
Marking (See Page 3): BC817-16 K6A  
BC817-25 K6B  
a
All Dimensions in mm  
BC817-40 K6C  
·
·
Ordering & Date Code Information: See Page 3  
Weight: 0.008 grams (approximate)  
@TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCEO  
VEBO  
IC  
Value  
45  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
5.0  
V
800  
mA  
mA  
mA  
mW  
°C/W  
°C/W  
°C  
ICM  
Peak Collector Current  
Peak Emitter Current  
1000  
1000  
310  
IEM  
Power Dissipation at TSB = 50°C (Note 1)  
Pd  
RqSB  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Substrate Backside (Note 1)  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
320  
403  
-65 to +150  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic (Note 2)  
Symbol  
Min  
Max  
Unit  
Test Condition  
DC Current Gain  
Current Gain Group -16  
VCE = 1.0V, IC = 100mA  
100  
160  
250  
60  
100  
170  
250  
400  
600  
—
-25  
-40  
hFE  
—
Current Gain Group -16  
VCE = 1.0V, IC = 300mA  
-25  
-40  
—
—
IC = 500mA, IB = 50mA  
VCE = 1.0V, IC = 300mA  
VCE(SAT)  
VBE  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
—
—
0.7  
1.2  
V
V
VCE = 45V  
100  
5.0  
nA  
µA  
ICES  
IEBO  
fT  
Collector-Emitter Cutoff Current  
Emitter-Base Cutoff Current  
Gain Bandwidth Product  
—
—
VCE = 25V, Tj = 150°C  
VEB = 4.0V  
100  
—
nA  
MHz  
pF  
VCE = 5.0V, IC = 10mA,  
f = 50MHz  
100  
—
VCB = 10V, f = 1.0MHz  
CCBO  
Collector-Base Capacitance  
12  
2
Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm area.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
DS11107 Rev. 11 - 2  
1 of 3  
www.diodes.com  
BC817-16/-25/-40  
ã Diodes Incorporated  
123

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