Datasheet > BC817-40

BC817-40

更新时间： 2024-11-29 12:55:47

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
2页	225K
描述
NPN EPTTAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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BC817-40 数据手册

RoHS

B C 8 1 7 - 1 6 / - 2 5 / 4 0

NPN EPTTAXIAL SILICON TRANSISTOR

SURFACE MOUNT SMALL

SIGANL TRANSISTORS

(Ta=25^oC)

ABSOLUTE MAXIMUM RATINGS

Symbol

Rating

Unit

Characteristic

Collector-Emitter Voltage

CEO

Emitter-Base Voltage

Collector Current

CBO

1000

800

Peak Colteetor Current

Peak Fmitter Current

Power Dissipation Tsb=50^oC(Note1)

Junction Temperature

Storage Temperature

310

^OC

150

stg

-65~150

(Ta=25^oC)

ELECTRICAL CHARACTERISTICS

Charactcristic

Symbol MIN. TYP. MAX. Unit

Test Conditions

DC Current Gain Current Gain Group-16

-10

160

250

400

600

=1.0V, I

=100mA

-25

-40

Hfe

Current Gain Group-16

=1.0V, I

=300mA

-25

-40

100

170

Collector-Emitter Saturation Voltage

=500mA, I

=50mA

Vce(sat)

0.7

1.2

100

5.0

100

Base-

=1.0V, I

=45V,

=25V, Tj=150^o

=300mA

Emitter Voltage

Collector-Emitter Cutoff

Current

ces

ebo

Emitter-Base Cutoff Current

Gain Bandwidth Product

eb=4.0V

=5V, I =10mA

100

f=50MHz

=10V,f=1.0MHz

Collector-Base Capacitanee

cbo

WEJ ELECTRONIC CO.,LTD

Note:Device mounted on ceramic substrate 0.7mmX2.5mm²area.

DEVICE MARKING:

BC817-16=6A

BC817-25=6B

BC817-40=6C

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.,LTD

中文翻译

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