BC817-40

更新时间： 2024-11-28 22:22:03

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	59K
描述
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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中文翻译

获取价格

数据手册
替代型号

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BC817-40 数据手册

BC817-16 / -25 / -40

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features

Ideally Suited for Automatic Insertion

Epitaxial Planar Die Construction

For Switching, AF Driver and Amplifier

Applications

SOT-23

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.85

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.80

8°

Complementary PNP Types Available (BC807)

Mechanical Data

TOP VIEW

Case: SOT-23, Molded Plastic

Case material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202, Method

208

Pin Connections: See Diagram

Marking (See Page 3): BC817-16 6A, K6A

BC817-25 6B, K6B

BC817-40 6C, K6C

All Dimensions in mm

Ordering & Date Code Information: See Page 3

Approx. Weight: 0.008 grams

@T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_CEO

V_EBO

I_C

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

5.0

800

°C/W

°C

I_CM

Peak Collector Current

Peak Emitter Current

1000

310

I_EM

Power Dissipation at T_SB= 50°C (Note 1)

P_d

R_qSB

R_qJA

T_j, T_STG

Thermal Resistance, Junction to Substrate Backside (Note 1)

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

320

403

-65 to +150

@T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic (Note 2)

Symbol

Min

Max

Unit

Test Condition

DC Current Gain

Current Gain Group -16

V_CE= 1.0V, I_C= 100mA

100

160

250

100

170

250

400

600

—

-25

-40

h_FE

—

Current Gain Group -16

V_CE= 1.0V, I_C= 300mA

-25

-40

—

I_C= 500mA, I_B= 50mA

V_CE= 1.0V, I_C= 300mA

V_CE(SAT)

V_BE

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

—

0.7

1.2

V_CE= 45V

100

5.0

µA

I_CES

I_EBO

f_T

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

Gain Bandwidth Product

—

V_CE= 25V, T_j= 150°C

V_EB= 4.0V

100

—

MHz

_CE= 5.0V, I_C= 10mA,

100

—

f = 50MHz

V_CB= 10V, f = 1.0MHz

C_CBO

Collector-Base Capacitance

Notes:

1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm area.

2. Short duration pulse test used to minimize self-heating effect.

DS11107 Rev. 9 - 2

1 of 3

BC817-16/-25/-40

12 3

中文翻译

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BC817-40 替代型号

型号	品牌	替代类型	描述	数据表
BC817-25	DIOTEC	功能相似	Surface mount Si-Epitaxial PlanarTransistors

与BC817-40相关器件

型号	品牌	获取价格	描述	数据表
BC817-40,215	NXP	获取价格	BC817; BC817W; BC337 - 45 V, 500 mA NPN general-purpose transistors TO-236 3-Pin
BC817-40,235	NXP	获取价格	BC817; BC817W; BC337 - 45 V, 500 mA NPN general-purpose transistors TO-236 3-Pin
BC817-40.215	NXP	获取价格	NPN general-purpose transistors.
BC817-40/E8	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 800MA I(C) \| SOT-23
BC817-40/E9	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 800MA I(C) \| SOT-23
BC817-40/SNR	ETC	获取价格	TRANS NPN 45V 0.5A SOT23
BC817-40/SNVL	ETC	获取价格	TRANS NPN 45V 0.5A SOT23
BC817-40/T1	ETC	获取价格	TRANSISTOR SMD KLEINSIGN. SOT 23 323 143
BC817-40/T3	NXP	获取价格	TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI
BC817-40/T4	NXP	获取价格	TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI

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