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BC817-25 PDF预览

BC817-25

更新时间: 2024-02-06 14:36:44
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体小信号双极晶体管
页数 文件大小 规格书
2页 121K
描述
Surface mount Si-Epitaxial PlanarTransistors

BC817-25 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.55
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):170 MHz
Base Number Matches:1

BC817-25 数据手册

 浏览型号BC817-25的Datasheet PDF文件第2页 
BC 817 / BC 818  
NPN  
General Purpose Transistors  
Surface mount Si-Epitaxial PlanarTransistors  
NPN  
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage  
Power dissipation – Verlustleistung  
310 mW  
±0.1  
Plastic case  
SOT-23  
1.1  
2.9  
0.4  
Kunststoffgehäuse  
(TO-236)  
3
Type  
Code  
Weight approx. – Gewicht ca.  
0.01 g  
2
1
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.9  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 817  
BC 818  
25 V  
30 V  
Collector-Emitter-voltage  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
Peak Coll. current – Kollektor-Spitzenstrom  
Peak Base current – Basis-Spitzenstrom  
Peak Emitter current – Emitter-Spitzenstrom  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
B open  
B shorted VCES  
E open  
C open  
VCE0  
45 V  
50 V  
50 V  
VCB0  
VEB0  
Ptot  
IC  
ICM  
IBM  
- IEM  
Tj  
30 V  
5 V  
310 mW 1)  
800 mA  
1000 mA  
200 mA  
1000 mA  
150C  
TS  
- 65…+ 150C  
Characteristics, Tj = 25C  
Kennwerte, Tj = 25C  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis  
VCE = 1 V, IC = 100 mA  
VCE = 1 V, IC = 500 mA  
hFE  
hFE  
hFE  
hFE  
hFE  
100  
40  
100  
160  
250  
160  
250  
400  
600  
250  
400  
600  
BC817  
BC818  
Group -16  
Group -25  
Group -40  
VCE = 1 V, IC = 100 mA  
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
6
01.11.2003  

BC817-25 替代型号

型号 品牌 替代类型 描述 数据表
BC817-25LT3 ONSEMI

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