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BC817-40 PDF预览

BC817-40

更新时间: 2024-11-28 22:22:03
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 256K
描述
NPN Small Signal Transistor 310mW

BC817-40 数据手册

 浏览型号BC817-40的Datasheet PDF文件第2页浏览型号BC817-40的Datasheet PDF文件第3页 
BC817-16  
THRU  
BC817-40  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
l Ideally Suited for Automatic Insertion  
l 150oC Junction Temperature  
NPN Small  
Signal Transistor  
310mW  
l For Switching and AF Amplifier Applications  
l Epitaxial Planar Die Construction  
Mechanical Data  
SOT-23  
l Case: SOT-23, Molded Plastic  
l Terminals: Solderable per MIL-STD-202, Method 208  
l Polarity: See Diagram  
A
D
l Weight: 0.008 grams ( approx.)  
B
C
l Marking: BC817-16  
BC817-25  
6A  
6B  
6C  
F
E
BC817-40  
Maximum Ratings @ 25oC Unless Otherwise Specified  
H
G
J
Charateristic  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol Value Unit  
VCEO  
VEBO  
IC  
45  
5
V
DIMENSIONS  
MM  
V
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
Collector Current  
800  
1000  
1000  
310  
mA  
mA  
mA  
mW  
Peak Collector Current  
ICM  
IEM  
Peak Emitter Current  
Power Dissipation@Ts=50oC(Note1)  
F
G
H
J
Pd  
.085  
.37  
T, TSTG -55~150 oC  
K
Operating & Storage Temperature  
j
Suggested Solder  
Pad Layout  
Note: 1. Device mounted on Ceramic Substrate 0.7mm X 2.5cm2 area  
.031  
.800  
.035  
.900  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  

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