Datasheet > BC817-40

BC817-40

更新时间： 2024-11-29 06:41:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	352K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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BC817-40 数据手册

BC817-16

BC817-25 NPN Transistor

BC817-40

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

FEATURES

SOT-23

Min

Dim

Max

Power dissipation

COLLECTOR

P_CM:300 mW (Tamb=25^o)

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Collector current

I_CM:500 mA

BASE

Collector-base voltage

V_(BR)CBO: 30 V

EMITTER

Operating and junction temperature range

T , T : -55^oto +150^o

Top View

stg

For general AF applications

High collector current

High current gain

All Dimension in mm

Low collector-emitter saturation voltage

ELECTRICAL CHARACTERISTICS (Tamb=25^oC unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=100µA, I_E=0

Ic=10mA, I_B=0

I_E=1µA, I_C=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

µA

V_CB=45V, I_E=0

V_EB=4V, I_C=0

0.1

I_EBO

Emitter cut-off current

0.1

h_FE(1)

h_FE(2)

V_CE=1V, I_C=100mA

V_CE=1V, I_C=500mA

100

600

DC current gain

V_CE(sat)

Collector-emitter saturation voltage

I_C=500mA, I_B=50mA

0.7

1.2

V_CE=1V, I_C=500mA

I_C=500mA, I_B=50mA

V_BE

Base-emitter voltage & saturation

voltage

V_BE(sat)

MHz

Transition frequency

f_T

V_CE=5V, I_C=10mA, f=100MHz

V_CB=10V, f=1MHz

100

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

BC817-16

BC817-25

160-400

BC817-40

250-600

Range

Marking

100-250

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2007 Rev. C

Page 1 of 2

中文翻译

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