Datasheet > BC808

BC808

更新时间： 2024-02-02 17:25:21

品牌	Logo	应用领域
RECTRON		晶体晶体管光电二极管
页数	文件大小	规格书
2页	294K
描述
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

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BC808 数据手册

RECTRON

TECHNICAL SPECIFICATION

SEMICONDUCTOR

BC808

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

FEATURES

* Power dissipation

PCM :

200

500

mW (Tamb=25^OC)

Collector current

ICM :

Collector-base voltage

: 30

(BR)CBO

SOT-23

Operating and storage junction temperature range

T_J,Tstg: -55^OC to +150^OC

COLLECTOR

0.055(1.40)

0.047(1.20)

BASE

MECHANICAL DATA

* Case: Molded plastic

EMITTER

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

0.006(0.15)

0.003(0.08)

0.043(1.10)

0.035(0.90)

0.020(0.50)

0.012(0.30)

0.004(0.10)

0.000(0.00)

* Weight: 0.008 gram

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.019(2.00)

0.071(1.80)

0.118(3.00)

0.110(2.80)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^OC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )

TYP

CHARACTERISTICS

Collector-base breakdown voltage (I = -100µA, I =0)

SYMBOL

MIN

-30

MAX

UNITS

(BR)CBO

Collector-emitter breakdown voltage (I = -1mA, I =0)

(BR)CEO

-25

Emitter-base breakdown voltage (I = -100µA, I =0)

-5

(BR)EBO

Collector cut-off current (V = -30V, I =0)

µA

-0.1

CBO

Emitter cut-off current (V = -4V, I =0)

EBO

-0.1

600

DC current gain (V = -1V, I = -100mA)

100

DC current gain (V = -1V, I = -500mA)

-0.7

1.2

Collector-emitter saturation voltage (I = -500mA, I = -50mA)

CE(sat)

Base - emitter voltage (V = -1V, I = -500mA)

Transition frequency (V = -5V, I = -10mA, f= 50MHZ)

100

MHz

Collector output capacitance (V = -10V, I = 0, f= 1MHZ)

Cob

CLASSIFICATION OF h

FE(1)

RANK

Range

100-250

160-400

250-600

Marking

2006-3

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