是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.08 |
基于收集器的最大容量: | 8 pF | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 250 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | VCEsat-Max: | 0.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BC808.40LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN |
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|
BC808.40LT1G | ONSEMI | General Purpose Transistors |
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|
BC808.40TR | CENTRAL | Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, |
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|
BC808.40TR13 | CENTRAL | Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, |
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|
BC808_15 | UTC | SWITCHING AND AMPLIFIER APPLICATION |
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|
BC80816 | FAIRCHILD | Switching and Amplifier Applications |
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