Datasheet > BC808.40LT1G

BC808.40LT1G

更新时间： 2022-02-26 12:23:53

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安森美 - ONSEMI		/
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4页	103K
描述
General Purpose Transistors

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BC808.40LT1G 数据手册

BC808-25LT1G,

BC808-40LT1G

General Purpose

Transistors

PNP Silicon

www.onsemi.com

Features

COLLECTOR

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

BASE

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

−25

Unit

Collector − Emitter Voltage

Collector − Base Voltage

CEO

CBO

EBO

−30

SOT−23

CASE 318

STYLE 6

Emitter − Base Voltage

−5.0

−500

Collector Current − Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

MARKING DIAGRAM

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

5x M G

(Note 1) T = 25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,

556

°C/W

Junction−to−Ambient

5x = Device Code

x = F or G

Total Device Dissipation Alumina

Substrate, (Note 2)

= Date Code*

= Pb−Free Package

= 25°C

300

2.4

mW/°C

Derate above 25°C

(Note: Microdot may be in either location)

Thermal Resistance,

417

°C/W

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Junction−to−Ambient

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

Publication Order Number:

October, 2016 − Rev. 5

BC808−25LT1/D

12 3 4

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