Datasheet > BC808-16

BC808-16

更新时间： 2024-11-20 08:49:39

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	248K
描述
PNP Silicon General Purpose Transistors

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中文翻译

获取价格

数据手册

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BC808-16 数据手册

BC808-16

BC808-25

BC808-40

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

PNP Silicon

General Purpose

Transistors

RoHS Compliant. See ordering information)

Capable of 0.3Watts of Power Dissipation.

Collector-current 0.8A

•

Operating and storage junction temperature range: -65^OC to +150^OC

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Mechanical Data

SOT-23

•

Case: SOT-23 Molded Plastic

Terminals: Solderable per MIL-STD-202, Method 208

Weight: 0.008 grams (approx.)

Device Marking:

BC808-16

BC808-25

BC808-40

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=-10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=-100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_E=-100uAdc, I _C=0)

Collector Cutoff Current

(V_CB=-25Vdc,I_E=0)

Emitter Cutoff Current

-25

-30

-5.0

---

Vdc

DIMENSIONS

---

Vdc

INCHES

MIN

-0.1

uAdc

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

I_EBO

---

(V_EB=-4.0Vdc, I _C=0)

.0005

.035

.003

.015

ON CHARACTERISTICS

h_FE(1)

.085

.37

DC Current Gain

(I_C=-100mAdc, V_CE=-1.0Vdc)

BC808-16

BC808-25

BC808-40

DC Current Gain

(I_C=-300mAdc, V_CE=-1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=-500mAdc, I_B=-50mAdc)

Suggested Solder

Pad Layout

100

160

250

---

250

400

630

---

Vdc

.031

.800

h_FE(2)

V_CE(sat)

V_BE

---

.035

.900

-0.7

-1.2

.079

2.000

inches

Base-Emitter Voltage

(V =-1Vdc,I_C=-300mAdc)

SMALL SIGNAL CHARACTERISTICS

f_T

Transition frequency

100

---

MHz

.037

.950

(V_CE=-5.0V, f=50MHz, I_C=-10mA)

Collector output capacitance

(V_CE=-5.0V, f=50MHz, I_C=-10mA)

.037

.950

C_ob

www.mccsemi.com

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Revision: A

2011/01/01

12 3

中文翻译

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与BC808-16相关器件

型号	品牌	获取价格	描述	数据表
BC808-16/E8	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 800MA I(C) \| SOT-23
BC808-16/E9	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 800MA I(C) \| SOT-23
BC808-16-AE3-R	UTC	获取价格	Transistor
BC808-16-AL3-R	UTC	获取价格	Transistor
BC808-16D87Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
BC808-16L	MOTOROLA	获取价格	Transistor
BC808-16L99Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
BC80816MTF	ROCHESTER	获取价格	800mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR
BC808-16S62Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
BC808-16T/R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| SOT-23

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