Datasheet > BC808-16/E9

BC808-16/E9

更新时间： 2024-02-06 22:35:21

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	205K
描述
TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 800MA I(C) \| SOT-23

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技术参数
数据手册

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BC808-16/E9 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.59	Is Samacsys：	N
最大集电极电流 (IC)：	0.8 A	配置：	Single
最小直流电流增益 (hFE)：	100	JESD-609代码：	e3
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.31 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

BC808-16/E9 数据手册

BC807, BC808

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistors (PNP)

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Mounting Pad Layout

Top View

0.031 (0.8)

0.035 (0.9)

Pin Configuration

1 = Base 2 = Emitter

3 = Collector

0.079 (2.0)

.037(0.95)

0.037 (0.95)

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Mechanical Data

Features

Case: SOT-23 Plastic Package

• PNP Silicon Epitaxial Planar Transistors for

switching, AF driver and amplifier applications.

Weight: approx. 0.008 grams

• Especially suited for automatic insertion in thick

and thin-film circuits.

Marking

Codes:

BC807-16 = 5A BC808-16 = 5E

-25 = 5B

-40 = 5C

-25 = 5F

-40 = 5G

• These transistors are subdivided into three groups

(-16, -25, and -40) according to their current gain.

Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

• As complementary types, the NPN transistors

BC817 and BC818 are recomended.

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

BC807

BC808

Collector-Emitter Voltage (Base shorted)

–V_CES

–V_CEO

BC807

BC808

Collector-Emitter Voltage (Base open)

Emitter-Base Voltage

Collector Current

–V_EBO

–I_C

800

°C/W

°C

Peak Collector Current

Peak Base Current

–I_CM

–I_BM

I_EM

1000

200

Peak Emitter Current

Power Dissipation at T_SB= 50 ˚C

1000

P_tot

310⁽¹⁾

450⁽¹⁾

320⁽¹⁾

150

Thermal Resistance Junction to Ambient Air

Thermal Resistance Junction to Substrate Backside

Junction Temperature

R_θJA

R_θSB

T_j

Storage Temperature Range

T_S

–65 to +150

°C

Note: (1) Device on fiberglass substrate, see layout on next page.

Document Number 88162

09-May-02

www.vishay.com

12 3 4 5

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