Datasheet > BC808-25

BC808-25

更新时间： 2024-11-17 22:40:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关放大器晶体管光电二极管 IOT
页数	文件大小	规格书
6页	74K
描述
Switching and Amplifier Applications

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数据手册

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BC808-25 数据手册

BC807/BC808

Switching and Amplifier Applications

•

Suitable for AF-Driver stages and low power output stages

Complement to BC817/BC818

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

CES

: BC807

: BC808

-50

-30

CEO

EBO

: BC807

: BC808

-45

-25

Emitter-Base Voltage

Collector Current (DC)

-5

-800

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

-310

150

-65 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage

I = -10mA, I =0

CEO

CES

EBO

: BC807

: BC808

-45

-25

Collector-Emitter Breakdown Voltage

I = -0.1mA, V =0

C BE

: BC807

: BC808

-50

-30

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

I = -0.1mA, I =0

-5

= -25V, V =0

-100

630

CES

EBO

= -4V, I =0

= -1V, I = -100mA

100

FE1

FE2

= -1V, I = -300mA

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

I = -500mA, I = -50mA

-0.7

-1.2

= -1V, I = -300mA

Current Gain Bandwidth Product

= -5V, I = -10mA

100

MHz

f=50MHz

Output Capacitance

= -10V, f=1MHz

Rev. A2, August 2002

12 3 4 5 6

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BC80825E6327HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
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