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BC808-25/E8 PDF预览

BC808-25/E8

更新时间： 2024-11-17 23:34:47
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
5页 205K
描述
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | SOT-23

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BC808-25/E8 数据手册

 浏览型号BC808-25/E8的Datasheet PDF文件第2页浏览型号BC808-25/E8的Datasheet PDF文件第3页浏览型号BC808-25/E8的Datasheet PDF文件第4页浏览型号BC808-25/E8的Datasheet PDF文件第5页 
BC807, BC808  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistors (PNP)  
TO-236AB (SOT-23)  
.122 (3.1)  
.110 (2.8)  
.016 (0.4)  
Mounting Pad Layout  
Top View  
3
0.031 (0.8)  
0.035 (0.9)  
Pin Configuration  
1
2
1 = Base 2 = Emitter  
3 = Collector  
0.079 (2.0)  
.037(0.95)  
.037(0.95)  
0.037 (0.95)  
0.037 (0.95)  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Dimensions in inches and (millimeters)  
Mechanical Data  
Features  
Case: SOT-23 Plastic Package  
• PNP Silicon Epitaxial Planar Transistors for  
switching, AF driver and amplifier applications.  
Weight: approx. 0.008 grams  
• Especially suited for automatic insertion in thick  
and thin-film circuits.  
Marking  
Codes:  
BC807-16 = 5A BC808-16 = 5E  
-25 = 5B  
-40 = 5C  
-25 = 5F  
-40 = 5G  
• These transistors are subdivided into three groups  
(-16, -25, and -40) according to their current gain.  
Packaging Codes/Options:  
E8/10K per 13” reel (8mm tape), 30K/box  
E9/3K per 7” reel (8mm tape), 30K/box  
• As complementary types, the NPN transistors  
BC817 and BC818 are recomended.  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
BC807  
BC808  
50  
30  
Collector-Emitter Voltage (Base shorted)  
–VCES  
–VCEO  
V
BC807  
BC808  
45  
25  
Collector-Emitter Voltage (Base open)  
V
Emitter-Base Voltage  
Collector Current  
–VEBO  
–IC  
5
800  
V
mA  
mA  
mA  
mA  
mW  
°C/W  
°C/W  
°C  
Peak Collector Current  
Peak Base Current  
–ICM  
–IBM  
IEM  
1000  
200  
Peak Emitter Current  
Power Dissipation at TSB = 50 ˚C  
1000  
Ptot  
310(1)  
450(1)  
320(1)  
150  
Thermal Resistance Junction to Ambient Air  
Thermal Resistance Junction to Substrate Backside  
Junction Temperature  
RθJA  
RθSB  
Tj  
Storage Temperature Range  
TS  
–65 to +150  
°C  
Note: (1) Device on fiberglass substrate, see layout on next page.  
Document Number 88162  
09-May-02  
www.vishay.com  
1
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