Datasheet > 晶体管 > 小信号双极晶体管> BC808-25-TP-HF

BC808-25-TP-HF

更新时间： 2024-09-24 13:05:55

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管光电二极管 IOT
页数	文件大小	规格书
3页	248K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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BC808-25-TP-HF 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.59
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

BC808-25-TP-HF 数据手册

BC808-16

BC808-25

BC808-40

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

PNP Silicon

General Purpose

Transistors

RoHS Compliant. See ordering information)

Capable of 0.3Watts of Power Dissipation.

Collector-current 0.8A

•

Operating and storage junction temperature range: -65^OC to +150^OC

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Mechanical Data

SOT-23

•

Case: SOT-23 Molded Plastic

Terminals: Solderable per MIL-STD-202, Method 208

Weight: 0.008 grams (approx.)

Device Marking:

BC808-16

BC808-25

BC808-40

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=-10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=-100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_E=-100uAdc, I _C=0)

Collector Cutoff Current

(V_CB=-25Vdc,I_E=0)

Emitter Cutoff Current

-25

-30

-5.0

---

Vdc

DIMENSIONS

---

Vdc

INCHES

MIN

-0.1

uAdc

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

I_EBO

---

(V_EB=-4.0Vdc, I _C=0)

.0005

.035

.003

.015

ON CHARACTERISTICS

h_FE(1)

.085

.37

DC Current Gain

(I_C=-100mAdc, V_CE=-1.0Vdc)

BC808-16

BC808-25

BC808-40

DC Current Gain

(I_C=-300mAdc, V_CE=-1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=-500mAdc, I_B=-50mAdc)

Suggested Solder

Pad Layout

100

160

250

---

250

400

630

---

Vdc

.031

.800

h_FE(2)

V_CE(sat)

V_BE

---

.035

.900

-0.7

-1.2

.079

2.000

inches

Base-Emitter Voltage

(V =-1Vdc,I_C=-300mAdc)

SMALL SIGNAL CHARACTERISTICS

f_T

Transition frequency

100

---

MHz

.037

.950

(V_CE=-5.0V, f=50MHz, I_C=-10mA)

Collector output capacitance

(V_CE=-5.0V, f=50MHz, I_C=-10mA)

.037

.950

C_ob

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

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