5秒后页面跳转
BC808-40LT1 PDF预览

BC808-40LT1

更新时间: 2024-11-05 13:05:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 125K
描述
PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL

BC808-40LT1 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:SOT-23包装说明:CASE 318-09, TO-236, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.18
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn80Pb20)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC808-40LT1 数据手册

 浏览型号BC808-40LT1的Datasheet PDF文件第2页浏览型号BC808-40LT1的Datasheet PDF文件第3页浏览型号BC808-40LT1的Datasheet PDF文件第4页 
BC808-25LT1G,  
BC808-40LT1G  
General Purpose  
Transistors  
PNP Silicon  
http://onsemi.com  
Features  
COLLECTOR  
3
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
25  
Unit  
V
Collector Emitter Voltage  
Collector Base Voltage  
V
CEO  
3
V
CBO  
30  
V
1
Emitter Base Voltage  
V
5.0  
500  
V
EBO  
2
Collector Current Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
SOT23  
CASE 318  
STYLE 6  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board,  
P
D
MARKING DIAGRAM  
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance,  
R
556  
°C/W  
q
JA  
5x M G  
JunctiontoAmbient  
G
Total Device Dissipation Alumina  
Substrate, (Note 2)  
P
D
1
T = 25°C  
300  
2.4  
mW  
mW/°C  
A
5x = Device Code  
x = F or G  
Derate above 25°C  
Thermal Resistance,  
R
q
417  
°C/W  
JA  
M
G
= Date Code*  
= PbFree Package  
JunctiontoAmbient  
Junction and Storage Temperature  
T , T  
J
55 to +150  
°C  
(Note: Microdot may be in either location)  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.062 in.  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 2  
BC80825LT1/D  
 

BC808-40LT1 替代型号

型号 品牌 替代类型 描述 数据表
BC808-25LT1 ONSEMI

类似代替

PNP Bipolar Transistor
BC808-40LT1G ONSEMI

类似代替

General Purpose Transistors PNP Silicon
BC808-25LT1G ONSEMI

类似代替

General Purpose Transistors PNP Silicon

与BC808-40LT1相关器件

型号 品牌 获取价格 描述 数据表
BC808-40LT1G ONSEMI

获取价格

General Purpose Transistors PNP Silicon
BC80840MTF ONSEMI

获取价格

PNP Bipolar Transistor
BC80840MTF FAIRCHILD

获取价格

FAIRCHILD Small Signal Transistors
BC80840MTF ROCHESTER

获取价格

800mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR
BC808-40S62Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
BC808-40T/R NXP

获取价格

TRANSISTOR 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC808-40TA ZETEX

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
BC808-40-TAPE-13 NXP

获取价格

TRANSISTOR 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC808-40-TAPE-7 NXP

获取价格

TRANSISTOR 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC808-40TC ZETEX

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,