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BC808-25E6433 PDF预览

BC808-25E6433

更新时间: 2024-11-19 04:06:43
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
11页 109K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

BC808-25E6433 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.35
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.33 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

BC808-25E6433 数据手册

 浏览型号BC808-25E6433的Datasheet PDF文件第2页浏览型号BC808-25E6433的Datasheet PDF文件第3页浏览型号BC808-25E6433的Datasheet PDF文件第4页浏览型号BC808-25E6433的Datasheet PDF文件第5页浏览型号BC808-25E6433的Datasheet PDF文件第6页浏览型号BC808-25E6433的Datasheet PDF文件第7页 
BC807.../BC808...  
PNP Silicon AF Transistor  
For general AF applications  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
Complementary type:  
BC817.../W, BC818.../W (NPN)  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
5As  
Pin Configuration  
Package  
BC807-16  
BC807-16W  
BC807-25  
BC807-25W  
BC807-40  
BC807-40W  
BC808-25  
BC808-25W  
BC808-40  
BC808-40W  
1 = B 2 = E 3 = C -  
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23  
SOT323  
SOT23  
SOT323  
SOT23  
SOT323  
SOT23  
SOT323  
SOT23  
SOT323  
5As  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
5Bs  
5Bs  
5Cs  
5Cs  
5Fs  
5Fs  
5Gs  
5Gs  
1Pb-containing package may be available upon special request  
2007-06-08  
1

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