是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.32 | 最大集电极电流 (IC): | 0.8 A |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.33 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC808-25 | DIOTEC |
获取价格 |
Surface mount Si-Epitaxial PlanarTransistors | |
BC808-25 | FAIRCHILD |
获取价格 |
Switching and Amplifier Applications | |
BC808-25 | MCC |
获取价格 |
PNP Silicon General Purpose Transistors | |
BC808-25 | INFINEON |
获取价格 |
PNP Silicon AF Transistors (For general AF applications High collector current High curren | |
BC808-25/E8 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | SOT-23 | |
BC808-25/E9 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | SOT-23 | |
BC808-25D87Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon | |
BC808-25E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon | |
BC80825E6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO | |
BC808-25E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon |