BC808-25

更新时间： 2024-11-18 08:49:39

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管光电二极管 IOT
页数	文件大小	规格书
3页	248K
描述
PNP Silicon General Purpose Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BC808-25 数据手册

BC808-16

BC808-25

BC808-40

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

PNP Silicon

General Purpose

Transistors

RoHS Compliant. See ordering information)

Capable of 0.3Watts of Power Dissipation.

Collector-current 0.8A

•

Operating and storage junction temperature range: -65^OC to +150^OC

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Mechanical Data

SOT-23

•

Case: SOT-23 Molded Plastic

Terminals: Solderable per MIL-STD-202, Method 208

Weight: 0.008 grams (approx.)

Device Marking:

BC808-16

BC808-25

BC808-40

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=-10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=-100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_E=-100uAdc, I _C=0)

Collector Cutoff Current

(V_CB=-25Vdc,I_E=0)

Emitter Cutoff Current

-25

-30

-5.0

---

Vdc

DIMENSIONS

---

Vdc

INCHES

MIN

-0.1

uAdc

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

I_EBO

---

(V_EB=-4.0Vdc, I _C=0)

.0005

.035

.003

.015

ON CHARACTERISTICS

h_FE(1)

.085

.37

DC Current Gain

(I_C=-100mAdc, V_CE=-1.0Vdc)

BC808-16

BC808-25

BC808-40

DC Current Gain

(I_C=-300mAdc, V_CE=-1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=-500mAdc, I_B=-50mAdc)

Suggested Solder

Pad Layout

100

160

250

---

250

400

630

---

Vdc

.031

.800

h_FE(2)

V_CE(sat)

V_BE

---

.035

.900

-0.7

-1.2

.079

2.000

inches

Base-Emitter Voltage

(V =-1Vdc,I_C=-300mAdc)

SMALL SIGNAL CHARACTERISTICS

f_T

Transition frequency

100

---

MHz

.037

.950

(V_CE=-5.0V, f=50MHz, I_C=-10mA)

Collector output capacitance

(V_CE=-5.0V, f=50MHz, I_C=-10mA)

.037

.950

C_ob

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

下载PDF

与BC808-25相关器件

型号	品牌	获取价格	描述	数据表
BC808-25/E8	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 800MA I(C) \| SOT-23
BC808-25/E9	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 800MA I(C) \| SOT-23
BC808-25D87Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
BC808-25E6327	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
BC80825E6327HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
BC808-25E6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
BC808-25L	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| SOT-23
BC808-25L99Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
BC808-25LT1	ROCHESTER	获取价格	500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-09, TO-236, 3 PIN
BC808-25LT1	MOTOROLA	获取价格	Transistor

与BC808-25相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

BC808-25

BC808-25 数据手册

与BC808-25相关器件

与BC808-25相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BC808-25

BC808-25 数据手册

与BC808-25相关器件

与BC808-25相关文章

您还可以找

您在本页遇到什么问题？