是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.08 | 其他特性: | HIGH CURRENT |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 250 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.3 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC808.40BK | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, | |
BC808.40LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | |
BC808.40LT1G | ONSEMI |
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General Purpose Transistors | |
BC808.40TR | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, | |
BC808.40TR13 | CENTRAL |
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Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, | |
BC808_15 | UTC |
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SWITCHING AND AMPLIFIER APPLICATION | |
BC80816 | FAIRCHILD |
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Switching and Amplifier Applications | |
BC808-16 | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors | |
BC808-16 | FAIRCHILD |
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Switching and Amplifier Applications | |
BC808-16 | MCC |
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PNP Silicon General Purpose Transistors |