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BC808

更新时间: 2024-11-17 22:48:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管光电二极管
页数 文件大小 规格书
5页 50K
描述
PNP Silicon AF Transistors

BC808 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.24最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):100
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):200 MHz

BC808 数据手册

 浏览型号BC808的Datasheet PDF文件第2页浏览型号BC808的Datasheet PDF文件第3页浏览型号BC808的Datasheet PDF文件第4页浏览型号BC808的Datasheet PDF文件第5页 
BC807, BC808  
PNP Silicon AF Transistors  
3
For general AF applications  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
Comlementary types: BC817, BC818 (NPN)  
2
1
VPS05161  
Type  
Marking  
5As  
Pin Configuration  
Package  
SOT23  
SOT23  
SOT23  
SOT23  
SOT23  
SOT23  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
3 = C  
3 = C  
BC807-16  
BC807-25  
BC807-40  
BC808-16  
BC808-25  
BC808-40  
5Bs  
5Cs  
3 = C  
3 = C  
3 = C  
3 = C  
5Es  
5Fs  
5Gs  
Maximum Ratings  
Parameter  
Symbol  
Unit  
BC807  
BC808  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
Base current  
45  
50  
5
25  
30  
5
V
V
V
V
CEO  
CBO  
EBO  
500  
1
mA  
A
I
C
I
CM  
100  
200  
330  
150  
mA  
I
B
Peak base current  
I
BM  
mW  
°C  
Total power dissipation, T = 79 °C  
P
tot  
S
Junction temperature  
Storage temperature  
T
j
-65 ... 150  
T
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
215  
K/W  
thJS  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Nov-29-2001  

BC808 替代型号

型号 品牌 替代类型 描述 数据表
BC808 RECTRON

功能相似

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

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