5秒后页面跳转
BC807W,115 PDF预览

BC807W,115

更新时间: 2024-11-17 14:47:59
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
19页 219K
描述
BC807; BC807W; BC327 - 45 V, 500 mA PNP general-purpose transistors SC-70 3-Pin

BC807W,115 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:7.19Is Samacsys:N
最大集电极电流 (IC):0.5 A基于收集器的最大容量:10 pF
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzVCEsat-Max:0.7 V
Base Number Matches:1

BC807W,115 数据手册

 浏览型号BC807W,115的Datasheet PDF文件第2页浏览型号BC807W,115的Datasheet PDF文件第3页浏览型号BC807W,115的Datasheet PDF文件第4页浏览型号BC807W,115的Datasheet PDF文件第5页浏览型号BC807W,115的Datasheet PDF文件第6页浏览型号BC807W,115的Datasheet PDF文件第7页 
BC807; BC807W; BC327  
45 V, 500 mA PNP general-purpose transistors  
Rev. 06 — 17 November 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP general-purpose transistors.  
Table 1. Product overview  
Type number  
Package  
NXP  
NPN complement  
JEITA  
-
BC807  
SOT23  
BC817  
BC807W  
BC327[1]  
SOT323  
SOT54 (TO-92)  
SC-70  
SC-43A  
BC817W  
BC337  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).  
1.2 Features  
„ High current  
„ Low voltage  
1.3 Applications  
„ General-purpose switching and amplification  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
VCEO  
collector-emitter voltage  
open base;  
IC = 10 mA  
-
-
45  
V
IC  
collector current (DC)  
peak collector current  
DC current gain  
-
-
-
-
500 mA  
ICM  
hFE  
1  
A
[1]  
IC = 100 mA;  
VCE = 1 V  
BC807; BC807W; BC327  
100  
100  
160  
250  
-
-
-
-
600  
250  
400  
600  
BC807-16; BC807-16W; BC327-16  
BC807-25; BC807-25W; BC327-25  
BC807-40; BC807-40W; BC327-40  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 
 

BC807W,115 替代型号

型号 品牌 替代类型 描述 数据表
BC807W,135 NXP

完全替代

BC807; BC807W; BC327 - 45 V, 500 mA PNP general-purpose transistors SC-70 3-Pin

与BC807W,115相关器件

型号 品牌 获取价格 描述 数据表
BC807W,135 NXP

获取价格

BC807; BC807W; BC327 - 45 V, 500 mA PNP general-purpose transistors SC-70 3-Pin
BC807W/T3 NXP

获取价格

TRANSISTOR 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP Gene
BC807W-115 NXP

获取价格

45 V, 500 mA PNP general-purpose transistors
BC807W-16 DIOTEC

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
BC807W-25 DIOTEC

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
BC807W-40 DIOTEC

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
BC807W-AH SWST

获取价格

小信号晶体管
BC807W-Q NEXPERIA

获取价格

45 V, 500 mA PNP general-purpose transistorsProduction
BC807W-T NXP

获取价格

TRANSISTOR 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP Gene
BC807WT/R ETC

获取价格

TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 500MA I(C) | SOT-23