BC807-16/ -25/ -40
PNP SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary NPN Types Available (BC817)
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
A
SOT-23
C
Dim
A
B
C
D
E
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
B
C
TOP VIEW
E
B
D
G
E
•
Qualified to AEC-Q101 Standards for High Reliability
H
Mechanical Data
K
M
G
H
J
•
•
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe)
Pin Connections: See Diagram
Ordering Information: See Page 3
Marking Information: See Page 3
- BC807-16 5A, K5A
J
L
•
•
•
K
L
C
M
α
•
•
•
All Dimensions in mm
- BC807-25 5B, K5B
- BC807-40 5C, K5C
E
B
•
Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Symbol
VCEO
VEBO
IC
Value
-45
Unit
V
Emitter-Base Voltage
-5.0
V
Collector Current
-500
-1000
-1000
310
mA
mA
mA
mW
°C/W
°C/W
°C
Peak Collector Current
ICM
Peak Emitter Current
IEM
Power Dissipation at TSB = 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Pd
320
RθJSB
RθJA
Tj, TSTG
403
-65 to +150
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 2)
Current Gain Group -16
Symbol
Min
Typ
Max
Unit
Test Condition
100
160
250
60
250
400
600
—
VCE = -1.0V, IC = -100mA
-25
-40
DC Current Gain
hFE
—
—
VCE = -1.0V, IC = -300mA
Current Gain Group -16
100
170
—
—
-25
-40
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT)
VBE
—
—
—
—
-0.7
-1.2
V
V
IC = -500mA, IB = -50mA
VCE = -1.0V, IC = -300mA
-100
-5.0
nA
µA
VCE = -45V
VCE = -25V, Tj = 150°C
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
ICES
IEBO
fT
—
—
—
—
—
—
-100
nA
MHz
pF
VEB = -4.0V
VCE = -5.0V, IC = -10mA,
f = 50MHz
100
—
—
Collector-Base Capacitance
CCBO
12
VCB = -10V, f = 1.0MHz
Notes:
1. Device mounted on ceramic substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS11208 Rev. 17 - 2
1 of 3
BC807-16/-25/-40
© Diodes Incorporated
www.diodes.com
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