Datasheet > BC807-XXLT1

BC807-XXLT1

更新时间： 2024-11-19 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
3页	166K
描述
General Purpose Transistors

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数据手册

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BC807-XXLT1 数据手册

WILLAS

BC807-xxLT1

GeneralPurposeTransistors

PNPSilicon

FEATURE

Collector current capability I_C= -500 mA.

Collector-emitter voltage V_CEO(max) = -45 V.

General purpose switching and amplification.

PNP complement: BC807 Series.

We declare that the material of product compliance with RoHS requirements.

SOT–23

RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

BC807-16LT1

5A1

3000/Tape&Reel

COLLECTOR

BC807-25LT1

BC807-40LT1

5B1

5C1

3000/Tape&Reel

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

–45

–50

V _CBO

V _EBO

–5.0

–500

Collector Current — Continuous

I _C

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A

P_D

= 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P_D

556

°C/W

Alumina Substrate, (2) T_A

Derate above 25°C

= 25°C

300

2.4

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

°C/W

°C

T _J

, T ^stg

–55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2012-11

WILLAS ELECTRONIC CORP.

12 3

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