Datasheet > BC807W-AH

BC807W-AH

更新时间： 2023-12-06 20:11:24

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	957K
描述
小信号晶体管

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BC807W-AH 数据手册

BC807W,BC808W-AH

PNP Silicon Epitaxial Planar Transistors

Features

• AEC-Q101 Qualified

• These transistors are subdivided into three groups

-16, -25, -40 according to their current gain

• Halogen and Antimony Free(HAF), RoHS compliant

Applications

• For general purpose and switching

Absolute Maximum Ratings (T_a= 25

)

Parameter

Symbol

-V_CBO

Value

Unit

Collector Base Voltage

BC807W

BC808W

Collector Emitter Voltage

BC807W

BC808W

-V_CEO

Emitter Base Voltage

Collector Current

-V_EBO

-I_C

500

Peak Collector Current

Peak Base Current

-I_CM

-I_BM

P_tot

T_J

200

150

Power Dissipation

Junction Temperature

Storage Temperature Range

T_stg

-65 to +150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 27/02/2023 Rev: 02

12 3 4 5

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