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BC556B PDF预览

BC556B

更新时间: 2024-11-03 22:48:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 89K
描述
Si-Epitaxial PlanarTransistors

BC556B 数据手册

 浏览型号BC556B的Datasheet PDF文件第2页 
BC 556 ... BC 559  
PNP  
General Purpose Transistors  
PNP  
Si-Epitaxial PlanarTransistors  
Power dissipation – Verlustleistung  
500 mW  
Plastic case  
TO-92  
(10D3)  
Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging taped in ammo pack  
Standard Pinning  
Standard Lieferform gegurtet in Ammo-Pack  
1 = C 2 = B 3 = E  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 556  
65 V  
80 V  
BC 557  
45 V  
50 V  
BC 558/559  
30 V  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
Junction temp. – Sperrschichttemperatur  
B open  
E open  
C open  
- VCE0  
- VCB0  
- VEB0  
Ptot  
- IC  
Tj  
30 V  
5 V  
500 mW 1)  
100 mA  
150C  
Storage temperature – Lagerungstemperatur  
TS  
- 55…+ 150C  
Characteristics (Tj = 25C)  
Kennwerte (Tj = 25C)  
Group A  
Group B  
Group C  
DC current gain – Kollektor-Basis-Stromverhältnis  
- VCE = 5 V, - IC = 2 mA  
hFE  
110...220  
200...460  
420...800  
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz  
Small signal current gain  
hfe  
typ. 220  
typ. 330  
typ. 600  
Stromverstärkung  
Input impedance – Eingangsimpedanz  
Output admittance – Ausg.-Leitwert  
hie  
hoe  
1.6...4.5 k  
18 < 30 S  
3.2...8.5 kꢀ  
30 < 60 S  
6...15 kꢀ  
60 < 110 S  
Reverse voltage transfer ratio  
Spannungsrückwirkung  
Collector saturation voltage – Kollektor-Sättigungsspg.  
- IC = 100 mA, - IB = 5 mA -VCEsat  
hre  
typ.1.5 *10-4  
typ. 2 *10-4  
typ. 3 *10-4  
300 mV  
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case  
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
8
01.11.2003  

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