Datasheet > BC556B-D11Z

BC556B-D11Z

更新时间： 2024-01-27 11:01:24

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	41K
描述
Transistor

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技术参数
数据手册

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BC556B-D11Z 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	180
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

BC556B-D11Z 数据手册

BC556/557/558/559/560

Switching and Amplifier

•

High Voltage: BC556, V

Low Noise: BC559, BC560

Complement to BC546 ... BC 550

= -65V

CEO

TO-92

1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

: BC556

CBO

-80

-50

-30

: BC557/560

: BC558/559

Collector-Emitter Voltage

CEO

: BC556

: BC557/560

: BC558/559

-65

-45

-30

Emitter-Base Voltage

-5

-100

EBO

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

°C

500

150

-65 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

DC Current Gain

Test Condition

Min.

Typ.

Max.

-15

Units

= -30V, I =0

CBO

= -5V, I =2mA

110

800

(sat)

Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA

-90

-250

-300

-650

I = -100mA, I = -5mA

(sat) Collector-Base Saturation Voltage

I = -10mA, I = -0.5mA

-700

-900

I = -100mA, I = -5mA

(on) Base-Emitter On Voltage

= -5V, I = -2mA

-600

-660

-750

-800

= -5V, I = -10mA

Current Gain Bandwidth Product

Output Capacitance

= -5V, I = -10mA, f=10MHz

150

MHz

= -10V, I =0, f=1MHz

Noise Figure

: BC556/557/558

: BC559/560

: BC559

= -5V, I = -200µA

1.2

f=1KHz, R =2KΩ

= -5V, I = -200µA

: BC560

R =2KΩ, f=30~15000MHz

Classification

110 ~ 220

200 ~ 450

420 ~ 800

Rev. A2, August 2002

12 3 4

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