Datasheet > BC556B_07

BC556B_07

更新时间： 2024-11-25 12:50:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
7页	87K
描述
Amplifier Transistors

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中文翻译

获取价格

数据手册

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BC556B_07 数据手册

BC556B, BC557A, B, C,

BC558B

Amplifier Transistors

PNP Silicon

http://onsemi.com

Features

• Pb−Free Packages are Available*

COLLECTOR

MAXIMUM RATINGS

BASE

Rating

Symbol

Value

Unit

Collector - Emitter Voltage

Vdc

CEO

CBO

EBO

BC556

BC557

BC558

−65

−45

−30

EMITTER

Collector - Base Voltage

Emitter - Base Voltage

Vdc

BC556

BC557

BC558

−80

−50

−30

TO−92

CASE 29

STYLE 17

−5.0

Vdc

Collector Current − Continuous

Collector Current − Peak

−100

−200

mAdc

Base Current − Peak

−200

mAdc

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

1.5

mW/°C

Derate above 25°C

MARKING DIAGRAM

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

55xx

AYWW G

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

83.3

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= 6B, 7A, 7B, 7C, or 8B

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

March, 2007 − Rev. 3

BC556B/D

12 3 4 5 6 7

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