BC556B, BC557A, B, C,
BC558B, C
Amplifier Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
2
BASE
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
3
BC556
BC557
BC558
−65
−45
−30
EMITTER
Collector - Base Voltage
Emitter - Base Voltage
Vdc
BC556
BC557
BC558
−80
−50
−30
−5.0
Vdc
TO−92
CASE 29
STYLE 17
Collector Current − Continuous
Collector Current − Peak
I
−100
−200
mAdc
C
I
I
1
CM
2
3
Base Current − Peak
−200
mAdc
BM
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
625
5.0
mW
mW/°C
A
D
D
Total Device Dissipation @ T = 25°C
P
1.5
12
W
mW/°C
C
MARKING DIAGRAM
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
BC
55xx
AYWW G
G
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R
200
°C/W
q
JA
Thermal Resistance,
Junction−to−Case
R
83.3
°C/W
q
JC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BC55x = Device Code
x = 6, 7, or 8
A
= Assembly Location
Y
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
September, 2005 − Rev. 2
BC556B/D